IHFW40N65R5SXKSA1
Infineon Technologies
Infineon Technologies
IHFW40N65R5SXKSA1
$5.34
Available to order
Reference Price (USD)
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$5.34000
500+
$5.2866
1000+
$5.2332
1500+
$5.1798
2000+
$5.1264
2500+
$5.073
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The IHFW40N65R5SXKSA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IHFW40N65R5SXKSA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 61 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 108 W
- Switching Energy: 1.52mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 44ns/363ns
- Test Condition: 400V, 40A, 23.1Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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