IHW20N65R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 40A TO247-3
$3.32
Available to order
Reference Price (USD)
1+
$3.69000
10+
$3.33200
240+
$2.77317
720+
$2.39576
1,200+
$2.05740
Exquisite packaging
Discount
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The IHW20N65R5XKSA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IHW20N65R5XKSA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 300µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: 97 nC
- Td (on/off) @ 25°C: 24ns/250ns
- Test Condition: 400V, 10A, 20Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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