IKFW75N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IKFW75N65EH5XKSA1
$8.24
Available to order
Reference Price (USD)
1+
$8.24000
500+
$8.1576
1000+
$8.0752
1500+
$7.9928
2000+
$7.9104
2500+
$7.828
Exquisite packaging
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The IKFW75N65EH5XKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKFW75N65EH5XKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKFW75N65EH5XKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 148 W
- Switching Energy: 1.8mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 144 nC
- Td (on/off) @ 25°C: 30ns/206ns
- Test Condition: 400V, 60A, 12Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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