IKP39N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 39A TO220-3
$4.04
Available to order
Reference Price (USD)
1+
$4.04000
500+
$3.9996
1000+
$3.9592
1500+
$3.9188
2000+
$3.8784
2500+
$3.838
Exquisite packaging
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Upgrade your power management systems with the IKP39N65ES5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKP39N65ES5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKP39N65ES5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 62 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
- Power - Max: 188 W
- Switching Energy: 800µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 20ns/120ns
- Test Condition: 400V, 39A, 12.8Ohm, 15V
- Reverse Recovery Time (trr): 84 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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