IKW50N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
$6.12
Available to order
Reference Price (USD)
1+
$6.32000
10+
$5.72000
240+
$4.76004
720+
$4.11226
1,200+
$3.53148
Exquisite packaging
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The IKW50N65ES5XKSA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IKW50N65ES5XKSA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 274 W
- Switching Energy: 1.23mJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 20ns/127ns
- Test Condition: 400V, 50A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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