IKZA50N65SS5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$12.20
Available to order
Reference Price (USD)
1+
$12.20000
500+
$12.078
1000+
$11.956
1500+
$11.834
2000+
$11.712
2500+
$11.59
Exquisite packaging
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Upgrade your power management systems with the IKZA50N65SS5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKZA50N65SS5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKZA50N65SS5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 274 W
- Switching Energy: 230µJ (on), 520µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 19ns/140ns
- Test Condition: 400V, 50A, 9Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-3
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