SGP07N120XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 16.5A 125W TO220
$3.06
Available to order
Reference Price (USD)
1+
$3.68000
10+
$3.30800
100+
$2.71070
500+
$2.30756
1,000+
$1.94613
Exquisite packaging
Discount
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Enhance your electronic projects with the SGP07N120XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the SGP07N120XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose SGP07N120XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16.5 A
- Current - Collector Pulsed (Icm): 27 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 1mJ
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/440ns
- Test Condition: 800V, 8A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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