IM241L6S1BAUMA1
Infineon Technologies
Infineon Technologies
CIPOS MICRO
$9.52
Available to order
Reference Price (USD)
1+
$9.52000
500+
$9.4248
1000+
$9.3296
1500+
$9.2344
2000+
$9.1392
2500+
$9.044
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's IM241L6S1BAUMA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IM241L6S1BAUMA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IM241L6S1BAUMA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the IM241L6S1BAUMA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): -
- Power - Max: 15 W
- Vce(on) (Max) @ Vge, Ic: 1.62V @ 15V, 2A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 23-PowerSMD Module, Gull Wing
- Supplier Device Package: 23-SOP
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