IPA030N10NF2SXKSA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO220-3
$5.47
Available to order
Reference Price (USD)
1+
$5.47000
500+
$5.4153
1000+
$5.3606
1500+
$5.3059
2000+
$5.2512
2500+
$5.1965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPA030N10NF2SXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPA030N10NF2SXKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 169µA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Fairchild Semiconductor
NDP7050
UnitedSiC
UF3C120150K4S
Linear Integrated Systems, Inc.
SST214 SOT-143 4L
Panjit International Inc.
PJD16P04_L2_00001
Rohm Semiconductor
RD3T050CNTL1
onsemi
NTD6414AN-1G
onsemi
NVH4L020N120SC1
Diodes Incorporated
DMN3020UFDF-13
STMicroelectronics
STFW60N65M5
Alpha & Omega Semiconductor Inc.