IPAN60R360PFD7SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 10A TO220
$1.88
Available to order
Reference Price (USD)
1+
$1.88000
500+
$1.8612
1000+
$1.8424
1500+
$1.8236
2000+
$1.8048
2500+
$1.786
Exquisite packaging
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Discover the IPAN60R360PFD7SXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPAN60R360PFD7SXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 23W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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