IPB100N06S2L05ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 100A TO263-3
$4.79
Available to order
Reference Price (USD)
1,000+
$1.51350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPB100N06S2L05ATMA2 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPB100N06S2L05ATMA2 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMTH6004SCT
IXYS
IXFN32N100Q3
Infineon Technologies
IPI50R250CPXKSA1
Infineon Technologies
IRL2910STRRPBF
Infineon Technologies
IPA80R750P7XKSA1
Fairchild Semiconductor
FQH18N50V2
Alpha & Omega Semiconductor Inc.
AOWF600A70
Vishay Siliconix
SIHH27N60EF-T1-GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJB200G06B-F2-0000HF
Vishay Siliconix