IPB110P06LMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 100A TO263-3
$5.93
Available to order
Reference Price (USD)
1+
$5.93000
500+
$5.8707
1000+
$5.8114
1500+
$5.7521
2000+
$5.6928
2500+
$5.6335
Exquisite packaging
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The IPB110P06LMATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPB110P06LMATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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