IPB60R160C6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 23.8A D2PAK
$5.14
Available to order
Reference Price (USD)
1,000+
$1.95334
2,000+
$1.85567
5,000+
$1.78591
Exquisite packaging
Discount
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Optimize your power electronics with the IPB60R160C6ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPB60R160C6ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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