IPD30N06S4L23ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 30A TO252-31
$1.09
Available to order
Reference Price (USD)
2,500+
$0.30608
5,000+
$0.28497
12,500+
$0.27442
25,000+
$0.26866
Exquisite packaging
Discount
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The IPD30N06S4L23ATMA2 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPD30N06S4L23ATMA2 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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