IPDD60R190G7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 13A HDSOP-10
$3.76
Available to order
Reference Price (USD)
1,700+
$1.48175
3,400+
$1.37956
5,100+
$1.32847
Exquisite packaging
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Discover the IPDD60R190G7XTMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPDD60R190G7XTMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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