SI3493BDV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 8A 6TSOP
$1.01
Available to order
Reference Price (USD)
3,000+
$0.32578
6,000+
$0.30464
15,000+
$0.29407
30,000+
$0.28830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SI3493BDV-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI3493BDV-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Fairchild Semiconductor
SFP9520
onsemi
NTTFS4H05NTWG
Toshiba Semiconductor and Storage
TK4R3E06PL,S1X
Infineon Technologies
IPI80N04S303AKSA1
Microchip Technology
MSC035SMA170B
Infineon Technologies
IPP60R180C7XKSA1
Fairchild Semiconductor
SFI9Z24TU
Nexperia USA Inc.
BUK7907-55ATE127
STMicroelectronics
STP22N60M6
Diodes Incorporated