TK4R3E06PL,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 80A TO220
$1.43
Available to order
Reference Price (USD)
1+
$1.98000
50+
$1.59760
100+
$1.43780
500+
$1.11826
1,000+
$0.92655
2,500+
$0.89460
Exquisite packaging
Discount
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The TK4R3E06PL,S1X single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TK4R3E06PL,S1X is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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