IPI023NE7N3 G
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 120A TO262-3
$2.11
Available to order
Reference Price (USD)
1+
$2.11000
500+
$2.0889
1000+
$2.0678
1500+
$2.0467
2000+
$2.0256
2500+
$2.0045
Exquisite packaging
Discount
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The IPI023NE7N3 G single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPI023NE7N3 G is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 273µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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