IPP042N03LGHKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 70A TO220-3
$0.81
Available to order
Reference Price (USD)
500+
$0.73840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP042N03LGHKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPP042N03LGHKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Microchip Technology
APT60N60SCSG
Fairchild Semiconductor
HUFA75343G3
Microchip Technology
DN2540N3-G-P003
Fairchild Semiconductor
FQB6N70TM
STMicroelectronics
STF28N65M2
Fairchild Semiconductor
FDD6632
STMicroelectronics
STB32NM50N
Diodes Incorporated
DMT12H090LFDF4-13
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ1216A-F1-1100HF
Infineon Technologies