IPP100N10S305AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 100A TO220-3
$2.93
Available to order
Reference Price (USD)
1+
$3.87000
10+
$3.45200
100+
$2.83030
500+
$2.29182
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPP100N10S305AKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPP100N10S305AKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2301F-F2-0000HF
Toshiba Semiconductor and Storage
TW060N120C,S1F
NTE Electronics, Inc
NTE222
Infineon Technologies
IPP65R110CFDAAKSA1
Fairchild Semiconductor
FDB8453LZ
Vishay Siliconix
IRFP350LCPBF
Sanyo
NTMFS4C50NT1G
Texas Instruments
CSD18543Q3A
Microchip Technology
APT34M60S
onsemi