IPP60R385CP
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 9A TO220-3-1
$1.34
Available to order
Reference Price (USD)
1+
$1.34000
500+
$1.3266
1000+
$1.3132
1500+
$1.2998
2000+
$1.2864
2500+
$1.273
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP60R385CP from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPP60R385CP offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIJ128LDP-T1-GE3
onsemi
NTB90N02T4G
Vishay Siliconix
SIHA100N60E-GE3
onsemi
NTD4854N-1G
onsemi
FDMC013P030Z
onsemi
NTD6415ANLT4G
Infineon Technologies
IPW65R045C7FKSA1
Infineon Technologies
BSZ039N06NSATMA1
STMicroelectronics
STI6N95K5
Toshiba Semiconductor and Storage