NTD4854N-1G
onsemi
onsemi
MOSFET N-CH 25V 15.7A/128A IPAK
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTD4854N-1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTD4854N-1G for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
onsemi
FDMC013P030Z
onsemi
NTD6415ANLT4G
Infineon Technologies
IPW65R045C7FKSA1
Infineon Technologies
BSZ039N06NSATMA1
STMicroelectronics
STI6N95K5
Toshiba Semiconductor and Storage
SSM6J502NU,LF
Renesas Electronics America Inc
2SK2158A-T1B-AT
IXYS
IXFP7N100P
Rohm Semiconductor
ZDX080N50
Infineon Technologies