IPP60R600P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 6A TO220-3
$2.01
Available to order
Reference Price (USD)
1+
$1.79000
10+
$1.60000
100+
$1.28300
500+
$1.01392
1,000+
$0.81825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPP60R600P7XKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPP60R600P7XKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPP65R190CFDXKSA2
Alpha & Omega Semiconductor Inc.
AOT480L
Diodes Incorporated
DMG4413LSS-13
Vishay Siliconix
SUP85N10-10-GE3
Vishay General Semiconductor - Diodes Division
VS-FC270SA20
IXYS
IXFH26N50P
onsemi
FDB14N30TM
Diodes Incorporated
DMN3200U-7
Alpha & Omega Semiconductor Inc.
AOD538
Vishay Siliconix