IXFH26N50P
IXYS
IXYS
MOSFET N-CH 500V 26A TO247AD
$7.98
Available to order
Reference Price (USD)
1+
$6.13000
30+
$4.92767
120+
$4.48950
510+
$3.63539
1,020+
$3.06600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFH26N50P single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFH26N50P for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
onsemi
FDB14N30TM
Diodes Incorporated
DMN3200U-7
Alpha & Omega Semiconductor Inc.
AOD538
Vishay Siliconix
SIHB21N60EF-GE3
Infineon Technologies
BSZ034N04LSATMA1
Infineon Technologies
IRFH8311TRPBF
Renesas Electronics America Inc
2SK3570-ZK-E1-AZ
Toshiba Semiconductor and Storage
SSM3K344R,LF
Microchip Technology
APT6038BFLLG
Rectron USA