IPP65R095C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 24A TO220-3
$7.39
Available to order
Reference Price (USD)
1+
$6.65000
10+
$5.97300
100+
$4.96770
500+
$4.09610
1,000+
$3.51501
Exquisite packaging
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Discover the IPP65R095C7XKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPP65R095C7XKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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