IPT059N15N3ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 155A 8HSOF
$10.15
Available to order
Reference Price (USD)
2,000+
$4.01730
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPT059N15N3ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPT059N15N3ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
onsemi
RFD16N05LSM9A
Rohm Semiconductor
R6046FNZ1C9
Vishay Siliconix
SI2347DS-T1-BE3
STMicroelectronics
STD30N10F7
onsemi
MTB3N60ET4
Vishay Siliconix
SISS26LDN-T1-GE3
STMicroelectronics
STW26NM60N
IXYS
IXFN80N60P3
Nexperia USA Inc.
BUK9605-30A,118
Infineon Technologies