SISS26LDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 23.7A/81.2A PPAK
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SISS26LDN-T1-GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
Related Products
STMicroelectronics
STW26NM60N
IXYS
IXFN80N60P3
Nexperia USA Inc.
BUK9605-30A,118
Infineon Technologies
IRFB4310ZPBF
Vishay Siliconix
SQD100N04-3M6L_GE3
IXYS
IXFH78N60X3
Vishay Siliconix
SI4435FDY-T1-GE3
STMicroelectronics
STH320N4F6-2
Vishay Siliconix
SQJQ186E-T1_GE3
Rohm Semiconductor