IPT60R075CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 33A 8HSOF
$8.74
Available to order
Reference Price (USD)
1+
$8.74000
500+
$8.6526
1000+
$8.5652
1500+
$8.4778
2000+
$8.3904
2500+
$8.303
Exquisite packaging
Discount
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Enhance your electronic projects with the IPT60R075CFD7XTMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPT60R075CFD7XTMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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