IPT60R102G7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 23A 8HSOF
$7.37
Available to order
Reference Price (USD)
2,000+
$2.96185
Exquisite packaging
Discount
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Enhance your electronic projects with the IPT60R102G7XTMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPT60R102G7XTMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 141W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-2
- Package / Case: 8-PowerSFN
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