IPU80R2K8CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 1.9A TO251-3
$0.32
Available to order
Reference Price (USD)
1+
$0.32000
500+
$0.3168
1000+
$0.3136
1500+
$0.3104
2000+
$0.3072
2500+
$0.304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPU80R2K8CEAKMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPU80R2K8CEAKMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Fairchild Semiconductor
FQPF3N80
Infineon Technologies
IPD50R380CEAUMA1
Diodes Incorporated
ZVN4310A
Infineon Technologies
IPT60R065S7XTMA1
Rohm Semiconductor
RQ7E100ATTCR
Vishay Siliconix
SQ3418EV-T1_GE3
Infineon Technologies
IPAN80R280P7XKSA1
onsemi
MTA2N60E
Rohm Semiconductor
RV2C002UNT2L
Infineon Technologies