IPW90R500C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 11A TO247-3
$5.66
Available to order
Reference Price (USD)
1+
$5.66000
500+
$5.6034
1000+
$5.5468
1500+
$5.4902
2000+
$5.4336
2500+
$5.377
Exquisite packaging
Discount
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The IPW90R500C3XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPW90R500C3XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 740µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-21
- Package / Case: TO-247-3
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