IPZA60R024P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 101A TO247-4-3
$16.38
Available to order
Reference Price (USD)
1+
$16.37900
500+
$16.21521
1000+
$16.05142
1500+
$15.88763
2000+
$15.72384
2500+
$15.56005
Exquisite packaging
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Discover the IPZA60R024P7XKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPZA60R024P7XKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.03mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 291W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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