IRF100P218AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 209A TO247AC
$9.82
Available to order
Reference Price (USD)
1+
$9.82000
500+
$9.7218
1000+
$9.6236
1500+
$9.5254
2000+
$9.4272
2500+
$9.329
Exquisite packaging
Discount
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The IRF100P218AKMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF100P218AKMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 278µA
- Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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