IRF6706S2TR1PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 17A DIRECTFET
$1.10
Available to order
Reference Price (USD)
1+
$1.10000
500+
$1.089
1000+
$1.078
1500+
$1.067
2000+
$1.056
2500+
$1.045
Exquisite packaging
Discount
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Meet the IRF6706S2TR1PBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF6706S2TR1PBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric S1
- Package / Case: DirectFET™ Isometric S1
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