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IRFH5302TRPBF

Infineon Technologies
IRFH5302TRPBF Preview
Infineon Technologies
MOSFET N-CH 30V 32A/100A PQFN
$1.41
Available to order
Reference Price (USD)
4,000+
$0.50050
8,000+
$0.47548
12,000+
$0.45760
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6) Single Die
  • Package / Case: 8-PowerVDFN

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