IRG4BC30FD1PBF
Infineon Technologies
Infineon Technologies
IGBT 600V 31A 100W TO220AB
$1.76
Available to order
Reference Price (USD)
1+
$1.76000
500+
$1.7424
1000+
$1.7248
1500+
$1.7072
2000+
$1.6896
2500+
$1.672
Exquisite packaging
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Discover the IRG4BC30FD1PBF Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IRG4BC30FD1PBF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IRG4BC30FD1PBF for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 31 A
- Current - Collector Pulsed (Icm): 124 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
- Power - Max: 100 W
- Switching Energy: 370µJ (on), 1.42mJ (off)
- Input Type: Standard
- Gate Charge: 57 nC
- Td (on/off) @ 25°C: 22ns/250ns
- Test Condition: 480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr): 46 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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