IRG8P15N120KDPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 30A 125W TO-247AC
$2.59
Available to order
Reference Price (USD)
1+
$2.59000
500+
$2.5641
1000+
$2.5382
1500+
$2.5123
2000+
$2.4864
2500+
$2.4605
Exquisite packaging
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Optimize your power systems with the IRG8P15N120KDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRG8P15N120KDPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 125 W
- Switching Energy: 600µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 98 nC
- Td (on/off) @ 25°C: 15ns/170ns
- Test Condition: 600V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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