IRL40T209ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 300A 8HSOF
$7.49
Available to order
Reference Price (USD)
2,000+
$3.51120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IRL40T209ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRL40T209ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Infineon Technologies
IPP80R360P7XKSA1
onsemi
NVTFS4C10NTAG
onsemi
NTLJS1102PTAG
IXYS
IXFK420N10T
Vishay Siliconix
SIHP5N80AE-GE3
onsemi
SFT1443-H
Nexperia USA Inc.
PMZ290UNE2YL
onsemi
FDS8870
Vishay Siliconix
SQJ433EP-T1_BE3
STMicroelectronics