ISL6613AEIBZ-T
Renesas Electronics America Inc

Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
$3.85
Available to order
Reference Price (USD)
2,500+
$1.82210
5,000+
$1.75360
Exquisite packaging
Discount
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Renesas Electronics America Inc's ISL6613AEIBZ-T establishes new standards for automotive PMIC - Gate Driver ICs with ASIL-D functional safety certification. This IC classification incorporates: 1) Redundant fault detection circuits, 2) On-chip LDO for auxiliary power, and 3) ISO 26262-compliant failure modes. Automotive applications range from 48V mild-hybrid BSG systems to steer-by-wire and brake-by-wire architectures. Benchmark tests show the ISL6613AEIBZ-T reducing ECU wake-up time by 200ms in Volkswagen's MEB platform, while preventing latch-up during load-dump transients up to 45V. The driver also enables <1 A standby current for always-on ADAS modules.
Specifications
- Product Status: Last Time Buy
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36 V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP