ISP20EP10LMXTSA1
Infineon Technologies
Infineon Technologies
SMALL SIGNAL MOSFETS PG-SOT223-4
$0.79
Available to order
Reference Price (USD)
1+
$0.79000
500+
$0.7821
1000+
$0.7742
1500+
$0.7663
2000+
$0.7584
2500+
$0.7505
Exquisite packaging
Discount
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Meet the ISP20EP10LMXTSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The ISP20EP10LMXTSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 78µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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