IXBA16N170AHV
IXYS
IXYS
REVERSE CONDUCTING IGBT
$27.50
Available to order
Reference Price (USD)
1+
$10.19000
10+
$9.16700
50+
$8.35180
100+
$7.53690
250+
$6.92580
500+
$6.31470
1,000+
$5.49990
Exquisite packaging
Discount
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Optimize your power systems with the IXBA16N170AHV Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXBA16N170AHV delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 15ns/250ns
- Test Condition: 1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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