IXFA5N100P
IXYS
IXYS
MOSFET N-CH 1000V 5A TO263
$3.96
Available to order
Reference Price (USD)
50+
$3.15000
Exquisite packaging
Discount
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Optimize your power electronics with the IXFA5N100P single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXFA5N100P combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA (IXFA)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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