IXFX26N90
IXYS
IXYS
MOSFET N-CH 900V 26A PLUS 247
$19.74
Available to order
Reference Price (USD)
30+
$17.94500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFX26N90 single MOSFET from IXYS is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IXFX26N90 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Infineon Technologies
IRFB4227PBF
Vishay Siliconix
SIHD2N80E-GE3
onsemi
NTD4806N-35G
UnitedSiC
UF4SC120030K4S
Infineon Technologies
IRF7490TRPBF
onsemi
FDMT80080DC
Toshiba Semiconductor and Storage
SSM3K376R,LXHF
Vishay Siliconix
SI7862ADP-T1-GE3
Infineon Technologies
BSZ021N04LS6ATMA1
Diodes Incorporated