IXGA30N120B3
IXYS
IXYS
IGBT 1200V 60A 300W TO263
$7.72
Available to order
Reference Price (USD)
1+
$6.76000
10+
$6.03800
50+
$5.43380
100+
$4.95080
250+
$4.46776
500+
$4.00890
1,000+
$3.38100
2,500+
$3.22000
Exquisite packaging
Discount
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The IXGA30N120B3 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXGA30N120B3 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXGA30N120B3 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 3.47mJ (on), 2.16mJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 16ns/127ns
- Test Condition: 960V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
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