IXGN82N120C3H1
IXYS
IXYS
IGBT MOD 1200V 130A 595W SOT227B
$44.77
Available to order
Reference Price (USD)
10+
$36.90800
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's IXGN82N120C3H1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IXGN82N120C3H1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IXGN82N120C3H1 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the IXGN82N120C3H1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 130 A
- Power - Max: 595 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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