IXKR40N60C
IXYS
IXYS
MOSFET N-CH 600V 38A ISOPLUS247
$25.86
Available to order
Reference Price (USD)
1+
$17.58000
30+
$14.78167
120+
$13.58300
510+
$11.58551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXKR40N60C from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXKR40N60C for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI7116DN-T1-E3
Fairchild Semiconductor
ISL9N315AD3ST
Renesas Electronics America Inc
UPA2520T1H-T1-AT
Infineon Technologies
BSB013NE2LXIXUMA1
Infineon Technologies
AUIRF7736M2TR
Infineon Technologies
IPW60R024P7XKSA1
Toshiba Semiconductor and Storage
TK33S10N1Z,LXHQ
Texas Instruments
CSD19538Q3A
Vishay Siliconix
IRFU9120PBF
Nexperia USA Inc.