IXTA52P10P
IXYS
IXYS
MOSFET P-CH 100V 52A TO263
$6.74
Available to order
Reference Price (USD)
1+
$5.18000
50+
$4.16260
100+
$3.79250
500+
$3.07100
1,000+
$2.59000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTA52P10P from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTA52P10P for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHU3N50D-E3
Infineon Technologies
SPB21N50C3ATMA1
Fairchild Semiconductor
SI3456DV
STMicroelectronics
STL105N4LF7AG
Rohm Semiconductor
RQ6G050ATTCR
IXYS
IXTX32P60P
Fairchild Semiconductor
FDP6030BL
STMicroelectronics
STD12N65M2
Fairchild Semiconductor
FQP55N06
STMicroelectronics