FDP6030BL
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 4
$0.58
Available to order
Reference Price (USD)
1+
$1.57000
10+
$1.38900
100+
$1.09770
800+
$0.74373
1,600+
$0.67204
Exquisite packaging
Discount
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Meet the FDP6030BL by Fairchild Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FDP6030BL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Fairchild Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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