FQP55N06
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 55A TO220-3
$1.31
Available to order
Reference Price (USD)
1+
$1.31000
500+
$1.2969
1000+
$1.2838
1500+
$1.2707
2000+
$1.2576
2500+
$1.2445
Exquisite packaging
Discount
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Upgrade your designs with the FQP55N06 by Fairchild Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FQP55N06 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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