IXTH16N10D2
IXYS
IXYS
MOSFET N-CH 100V 16A TO247
$16.57
Available to order
Reference Price (USD)
30+
$9.89767
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXTH16N10D2 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXTH16N10D2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 830W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI3493DDV-T1-GE3
onsemi
HUF75345G3
Fairchild Semiconductor
FQA13N50C
Renesas Electronics America Inc
UPA2721AGR-E1-AT
PN Junction Semiconductor
P1H06300D8
Infineon Technologies
IRF3415STRLPBF
Diodes Incorporated
DMG2305UX-13
NXP USA Inc.
PMN45EN,135
Alpha & Omega Semiconductor Inc.
AO4441
Infineon Technologies